PART |
Description |
Maker |
AT49F4096-90TI AT49F4096-90TC AT49F4096-90RC AT49F |
Quadruple 2-Input Exclusive-OR Gates 14-SSOP -40 to 85 4 Megabit 256K x 16 5-volt Only CMOS Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44 Dual 16-Bit Binary Counters with 3-State Output Registers 20-TSSOP -40 to 85 256K X 16 FLASH 5V PROM, 120 ns, PDSO44
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Atmel Corp. Atmel, Corp.
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AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7 M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48 High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
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Spansion Inc. Spansion, Inc. Xicon Passive Components Amphenol, Corp.
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IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
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ISSI
|
AM2404INA AM24LC02 AM24LC16 AM2404IN AM2404IS AM24 |
2-Wire Serial 4K-Bit (512 x 8) CMOS Electrically Erasable PROM
|
ANACHIP[Anachip Corp]
|
S29AL004D55MFNR20 S29AL004D55BFNR20 S29AL004D55MFN |
256K X 16 FLASH 3V PROM, 55 ns, PDSO44 256K X 16 FLASH 3V PROM, 55 ns, PBGA48 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
SPANSION LLC
|
AM24LC16VSA AM24LC16 AM24LC16I AM24LC16IN AM24LC16 |
2-Wire Serial 16K-bits (2048 x 8) CMOS Electrically Erasable PROM
|
ANACHIP[Anachip Corp]
|
MX29LV002CBQI-90 MX29LV002CBQI-70 MX29LV002CBTI-90 |
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 8 FLASH 3V PROM, 90 ns, PDSO32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 1M X 8 FLASH 3V PROM, 55 ns, PDSO40
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Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
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Turbo IC
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BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
IS28LV020-90T IS28LV020-90W |
256K X 8 FLASH 12V PROM, 90 ns, PDSO32 TSOP-32 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
|
Integrated Silicon Solution, Inc.
|
BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM 128】8 bit electrically erasable PROM
|
ROHM[Rohm]
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